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DataSheet.in
XZ1002-BD
8.5-11.0 GHz GaAs MMIC Core Chip
Features
Rev 01-Sep-10
* Highly Integrated Core Chip * Transmit and Receive Modes of Operation * Integrated T/R Switches, LNA and Driver Amplifier, 6-Bit Phase Shifter and 5-Bit Attenuator * 21.0 dB Small Signal RX Gain * +23.5 dBm TX P1dB Compression Point * Compensated On-Chip Gate Bias Circuit * Parallel Data Input * 100% On-Wafer RF, DC and Output Power Testing * 100% Visual Inspection to MIL-STD-883 Method 2010
Chip Device Layout
XZ1002-BD
Absolute Maximum Ratings
Supply Voltage (Vd) Gate Supply (Vs) Logic Supply (Vl) Supply Current (Id) Input Power Input Power RX Input Power RFCOM Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature 6V -6V to -4V 0 to 5.5V 350 mA TBD +20 dBm +15 dBm -65 to +165 C -55 to MTTF Graph1 MTTF Graph1
General Description
The XZ1002-BD is a highly integrated dual path transmit/receive 3 port core chip. It is designed for applications operating within the 8.5 to 11.0 GHz range. The core consists of integrated transmit/receive switches, LNA, 6-bit phase shifter, 5-bit attenuator and driver amplifier. The digital control logic allows for parallel data input so that the phase shifter and attenuator may be changed instantaneously. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for phased array radar applications. Parameter Frequency Range (f) Input Return Loss RX/TX Mode (S11) Output Return Loss RX/TX Mode (S22) Receive Small Signal Gain (S21) Transmit Small Signal Gain (S21) Receive Output Power for 1 dB Compression Point (P1dB) Transmit Output Power for 1 dB Compression Point (P1dB) Receive Noise Figure (NF) Receive Output Third Order Intercept (OIP3) Phase Shifter Range (6 Bit, 64 states, 5.625 deg step) RMS Phase Error Attenuator Range (5 Bit, 32 states, 0.9 dB step) RMS Attenuator Amplitude Error Drain Bias Voltage (Vd1,2,3,4) Gate Bias Voltage (Vs1,2,3) Control Voltage High (Va0,1,2,3,4) & (Vp0,1,2,3,4,5) Control Voltage Low (Va0,1,2,3,4) & (Vp0,1,2,3,4,5) Supply Current (Id) (Vd=4V, TX mode) Supply Current (Ia) (Vs=-5V) Supply Current (Il) (Vl=3.3V)
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Electrical Characteristics (Ambient Temperature T=25 oC)
Units GHz dB dB dB dB dBm dBm dB dBm deg deg dB dB VDC VDC VDC VDC mA mA mA Min. 8.5 Typ. 15.0 15.0 21.0 19.0 17.5 23.5 5.2 +28.0 0 1.5 0 -4.0 +2.0 0.0 0.3 +4.0 -5.0 +3.3 280 35 9.5 28.5 +4.5 +5.0 +0.8 355 Max. 11
Page 1 of 11
3F, 3-2 Industry East IX Road, Science-Based Industrial Park Hsinchu 30075 Taiwan, R.O.C Tel +886-3-567-9680 / Fax +886-3-567-9433 Email mtatechnicalhelp@macomtech.com Visit macomtechasia.com for additional data sheets and product information. Characteristic data and specifications are subject to change without notice. (c)2010 M/A-COM Tech Asia
DataSheet.in
XZ1002-BD
8.5-11.0 GHz GaAs MMIC Core Chip
Measurements (Multiple Devices)
S21(dB) @ RX reference state
Rev 01-Sep-10
10.3
10.5
10.8
11.3
11.5 11.5
8.25
8.75
9.75
10.8
9.25
10.3
10.5
11.3
11.5
8.5
9.5
10
11
8
9
Frequency (GHz)
Frequency (GHz)
0 -5
S11 in Receive Mode RX mode reference state measured at TA=35 C
0 -5 -10 -15 -20 -25 -30
S11 in Transmit Mode TX mode reference state measured at TA=35 C
S11 [dB]
-15 -20 -25 -30 7 7.5 8 8.5
S11 [dB]
-10
Frequency [GHz]
9
9.5
10
10.5
11
11.5
12
7
7.5
8
8.5
9
Frequency [GHz]
9.5
10
10.5
11
0 -5
S22 in Receive Mode RX mode reference state measured at TA=35 C
0 -5 -10 -15 -20 -25 -30 7 7.5
S22 in Transmit Mode TX mode reference state measured at TA=35 C
S22 [dB]
-15 -20 -25 -30 7 7.5 8 8.5
Frequency [GHz]
9
9.5
10
10.5
11
11.5
12
S22 [dB]
-10
8
8.5
9
Frequency [GHz]
9.5
10
10.5
11
Page 2 of 11
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. 3F, 3-2 Industry East IX Road, Science-Based Industrial Park Hsinchu 30075 Taiwan, R.O.C Tel +886-3-567-9680 / Fax +886-3-567-9433 Email mtatechnicalhelp@macomtech.com Visit macomtechasia.com for additional data sheets and product information. Characteristic data and specifications are subject to change without notice. (c)2010 M/A-COM Tech Asia
11.5
12 12
8.25
8.75
9.25
9.75
23 22.5 22 21.5 21 20.5 20 19.5 19 18.5 18
S21 in Receive Mode R X m o d e re fe re nc e s tate m e as ure d at T A =3 5 C
29.5 29 28.5 28 27.5 27 26.5 26 25.5 25 24.5
S21 in Transmit Mode TX mode reference state measured at TA=35 C
S21 [dB]
10
8.5
9.5
11
8
9
DataSheet.in
XZ1002-BD
8.5-11.0 GHz GaAs MMIC Core Chip
Measurements (cont.)
30.0
Rev 01-Sep-10
Attenuator Performance in Receive Mode RX mode measured at TA =35 C
RMS amplitude error [dB]
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
Attenuator Performance in Receive Mode RX mode measured at TA =35 C
Attenuation range [dB]
29.5
29.0
28.5
28.0
27.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0
0.0 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0
Frequency [GHz]
Frequency [GHz]
Maximum phase range [DEG]
10 .0
Attenuator Performance in Receive Mode RX mode measured at T A =35 C
-350.0 -351.0 -352.0 -353.0 -354.0 -355.0 -356.0 -357.0 -358.0 -359.0 -360.0 7.0 7.5
Phase Shifter Performance in Receive Mode =35 C RX mode measured at T A
RMS Phase error [DEG]
9 .0 8 .0 7 .0 6 .0 5 .0 4 .0 3 .0 2 .0 1 .0 0 .0 7.0 7.5 8.0 8.5 9.0 9.5 10 .0 1 0.5 11.0 11 .5 1 2.0
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
Frequency [GHz]
Frequency [GHz]
1.0
Phase Shifter Performance in Receive Mode RX mode measured at T A =35 C
RMS phase error [DEG]
5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 7.0 7.5 8.0
Phase Shifter Performance in Receive Mode RX mode measured at T A =35 C
RMS amplitude error [dB]
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.0
Frequency [GHz]
Frequency [GHz]
Page 3 of 11
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. 3F, 3-2 Industry East IX Road, Science-Based Industrial Park Hsinchu 30075 Taiwan, R.O.C Tel +886-3-567-9680 / Fax +886-3-567-9433 Email mtatechnicalhelp@macomtech.com Visit macomtechasia.com for additional data sheets and product information. Characteristic data and specifications are subject to change without notice. (c)2010 M/A-COM Tech Asia
DataSheet.in
XZ1002-BD
8.5-11.0 GHz GaAs MMIC Core Chip
Measurements (cont.)
Attenuator Performance over 32 States in Receive Mode
30
Attenuation at maximum state [dB]
Rev 01-Sep-10
29.0 28.5 28.0 27.5 27.0 26.5 26.0 7 8 9 10 11 12
Frequency [GHz]
Attenuation [dB]
20
10
0 7 8 9 10 11 12
Frequency [GHz]
Phase Shifter Performance over 64 States in Receive Mode
360 300
Phase shift [deg] Phase shift at maximum state [dB]
-350 -355 -360 -365 -370 -375 -380 7 8 9 10 11 12
Frequency [GHz]
240 180 120 60 0 7 8 9 10 11 12
Frequency [GHz]
10 9 8 7
NF versus Temperature in Receive Mode
25
Pout@Pin=5 dBm (dBm)
Large Signal Performance Sample measured at TA=35 C
24 23 22 21 20 19 18
NF [dB]
6 5 4 3 2 1 0 7 7.5 8 8.5 9 9.5 10 10.5 11 11.5 12 Ta=10_C Ta=35_C Ta=60_C
17 8 8.25 8.5 8.75 9 9.25 9.5 9.75 10 10.25 10.5 10.75 11 11.25 11.5
Frequency (GHz)
Frequency [GHz]
Page 4 of 11
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. 3F, 3-2 Industry East IX Road, Science-Based Industrial Park Hsinchu 30075 Taiwan, R.O.C Tel +886-3-567-9680 / Fax +886-3-567-9433 Email mtatechnicalhelp@macomtech.com Visit macomtechasia.com for additional data sheets and product information. Characteristic data and specifications are subject to change without notice. (c)2010 M/A-COM Tech Asia
DataSheet.in
XZ1002-BD
8.5-11.0 GHz GaAs MMIC Core Chip
Measurements (cont.)
Large Signal Performance Sample measured at Ta=35 C
Transmit POUT [dBm]
26
Rev 01-Sep-10
Large Signal Performance Sample measured at Ta=35 C
22
Receive POUT [dBm]
24 22 20 18 16 14 12 10 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
8.5 GHz 8.75 GHz 9 GHz 9.25 GHz 9.5 GHz 9.75 GHz 10 GHz 10.25 GHz 10.5 GHz 10.75 GHz 11 GHz
20 18 16 14 12 10 8 6 4 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
8.5 GHz 8.75 GHz 9 GHz 9.25 GHz 9.5 GHz 9.75 GHz 10 GHz 10.25 GHz 10.5 GHz 10.75 GHz 11 GHz
Pin (dBm)
Pin (dBm)
IIP3 versus Temperature in Receive Mode
15 14 13 Ta=10_C Ta=35_C Ta=60_C
35 34 33
OIP3 versus Temperature in Receive Mode
T a=1 0_C T a=3 5_C T a=6 0_C
OIP3 [dBm]
IIP3 [dBm]
12 11 10 9 8 7 6 5 7 7.5 8 8.5 9 9.5 10 10.5
32 31 30 29 28 27 26 25 7 7.5 8 8.5 9 9 .5 10 1 0.5 11
Frequency [GHz]
11
11.5
12
Frequency [GHz]
1 1.5
12
Gain Phase Plots
Measured in RX-mode at f=10 GHz and Ta=35 C
360 315 270
Measured in TX-mode at f=10 GHz and Ta=35 C
360 315 270
Phase shift []
225 180 135 90 45 0
Phase shift []
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
225 180 135 90 45 0
Attenuation [dB]
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
Attenuation [dB]
Page 5 of 11
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. 3F, 3-2 Industry East IX Road, Science-Based Industrial Park Hsinchu 30075 Taiwan, R.O.C Tel +886-3-567-9680 / Fax +886-3-567-9433 Email mtatechnicalhelp@macomtech.com Visit macomtechasia.com for additional data sheets and product information. Characteristic data and specifications are subject to change without notice. (c)2010 M/A-COM Tech Asia
DataSheet.in
XZ1002-BD
8.5-11.0 GHz GaAs MMIC Core Chip
Measurements (cont.)
4V Supply Current in Receive Mode over Temperature
250 240
Rev 01-Sep-10
4V Supply Current in Transmit Mode over Temperature
300
I+4V_1dB [mA]
I+4V_3dB [mA]
230 220 210 200 190 180 170 160 150 8 8.5 9 9.5 10 10.5 11 Ta=10_C Ta=35_C Ta=60_C
290
280
Ta=10_C Ta=35_C Ta=60_C
270
260 8 8.5 9 9.5 10 10.5 11
Frequency [GHz]
Frequency [GHz]
1500
DC Power Dissipation in Receive Mode over Temperature
DC Power Dissipation in Transmit Mode over Temperature
1500 1400
Pdc_MFC_1dB [mW]
1400 1300 1200 1100 1000 900 800 700 600 500 8 8.5 9 9.5 10 10.5 11 Ta=10_C Ta=35_C Ta=60_C
Pdc_MFC_3dB [mW]
1300 1200 1100 1000 900 800 700 600 500 8 8.5 9 9.5 10 10.5 11 Ta=10_C Ta=35_C Ta=60_C
Frequency [GHz]
Frequency [GHz]
Page 6 of 11
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. 3F, 3-2 Industry East IX Road, Science-Based Industrial Park Hsinchu 30075 Taiwan, R.O.C Tel +886-3-567-9680 / Fax +886-3-567-9433 Email mtatechnicalhelp@macomtech.com Visit macomtechasia.com for additional data sheets and product information. Characteristic data and specifications are subject to change without notice. (c)2010 M/A-COM Tech Asia
DataSheet.in
XZ1002-BD
8.5-11.0 GHz GaAs MMIC Core Chip
Core Chip Block Diagram
Gate Bias TX Switch TX-OUT Gate Bias MPA
Rev 01-Sep-10
AMP2
-0.9 V
Contol Logic
Common Switch TX/RX AMP1
ATT
0 /+3.3 V Digital Input
-1.0 V
LNA RX-IN RX Switch
-1.0 V
Gate Bias
Page 7 of 11
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. 3F, 3-2 Industry East IX Road, Science-Based Industrial Park Hsinchu 30075 Taiwan, R.O.C Tel +886-3-567-9680 / Fax +886-3-567-9433 Email mtatechnicalhelp@macomtech.com Visit macomtechasia.com for additional data sheets and product information. Characteristic data and specifications are subject to change without notice. (c)2010 M/A-COM Tech Asia
DataSheet.in
XZ1002-BD
8.5-11.0 GHz GaAs MMIC Core Chip
(0.066) (0.072) (0.078) (0.084)
Rev 01-Sep-10
3.013 (0.119)
5.000 (0.197)
2
3
4
5
6
3.663 (0.144)
7 8
Mechanical Drawing
1.679 1.829 1.979 2.129
4.613 (0.182)
XZ1002-BD
9
4.051 (0.159) 3.700 (0.146) 3.550 (0.040) 3.400 (0.134) 3.250 (0.128) 3.100 (0.122) 2.950 (0.116) 2.800 (0.110) 2.650 (0.104) 2.500 (0.098) 2.350 (0.093) 2.200 (0.087) 2.050 (0.081) 1.900 (0.075) 1.750 (0.069) 1.600 (0.063) 1.450 (0.057) 1.300 (0.051) 1.006 (0.040)
10 11 12 13 14 15 16 17
2.500 (0.098)
1
18 19 20 21 22 23 24 25 26 27
28
0.500 (0.020)
0.000 (0.000) 0.000 (0.000)
32
31 30
29
2.846 (0.112)
3.146 (0.124) 3.296 (0.130)
3.654 (0.144)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All Bond Pads are 0.100 x 0.100 (0.004 x 0.004). Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 12.4 mg.
Page 8 of 11
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. 3F, 3-2 Industry East IX Road, Science-Based Industrial Park Hsinchu 30075 Taiwan, R.O.C Tel +886-3-567-9680 / Fax +886-3-567-9433 Email mtatechnicalhelp@macomtech.com Visit macomtechasia.com for additional data sheets and product information. Characteristic data and specifications are subject to change without notice. (c)2010 M/A-COM Tech Asia
4.000 (0.157)
DataSheet.in
XZ1002-BD
8.5-11.0 GHz GaAs MMIC Core Chip
Bond Pad Designations
Pad # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Pad ID TX/RX Vd2 Vs1 GND RX Qnot Vd3 GND TXOUT GND A0 A3 A4 A2 A1 RX GND Voltage [VDC] RF +4.0 -5.0 -3.4 (RX Mode) 0 / +4.0 RF 0 / +3.3 0 / +3.3 0 / +3.3 0 / +3.3 0 / +3.3 0 / +3.3 Description TX input / RX output Interstage Amp Supply Gate Bias Decoupling Ground RF Switch Monitor Output PA Supply Decoupling Ground Transmit [TX] Output Decoupling Ground 0.9 dB Atten Bit 7.2 dB Atten Bit 14.4 dB Atten Bit 3.6 dB Atten Bit 1.8 dB Atten Bit TX/RX Switch Digital Ground Cross Talk Suppression Pad # 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Pad ID P5 P2 P4 P3 P1 P0 Qnot P0 Q P0 Vs2 V3 GND RXIN Vs3 Vd4 GND Vd1 Voltage [VDC] +3.3 +3.3 +3.3 +3.3 +3.3 +3.3 0 (Ref State) -3.4 (Ref State) -5.0 +3.3 RF -5.0 +4.0 0 / +4.0 0 0 0 0 0 0 / / / / / / Description 180 Phase Bit 22.5 Phase Bit 90 Phase Bit 45 Phase Bit 11.25 Phase Bit 5.625 Phase Bit P0 Voltage Monitor P0 Voltage Monitor Gate Bias On-Chip Pull-Up Decoupling Ground Receive [RX] Input Gate Bias Gate Bias (Positive) Decoupling Ground LNA Supply
Rev 01-Sep-10
App Note [1] Wire Bonding - Bond wires need to be as short as possible. The device is designed for a total bond wire inductance of 130 pH/RF bond pad. Different bond wire inductance will result in degraded performance.
Page 9 of 11
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. 3F, 3-2 Industry East IX Road, Science-Based Industrial Park Hsinchu 30075 Taiwan, R.O.C Tel +886-3-567-9680 / Fax +886-3-567-9433 Email mtatechnicalhelp@macomtech.com Visit macomtechasia.com for additional data sheets and product information. Characteristic data and specifications are subject to change without notice. (c)2010 M/A-COM Tech Asia
DataSheet.in
XZ1002-BD
8.5-11.0 GHz GaAs MMIC Core Chip
Rev 01-Sep-10
App Note [2] Biasing - The core chip can be operated in either Transmit [TX] or Receive [RX] mode. The bias setup is slightly different for each. TX Mode - The TX mode is activated by setting the TX/RX switch, bond pad 14 (RX), to logic high (+3.3V) Vrx=3.3V. In this mode, bond pad 5 (Vd3) for biasing the output power amplifier (MPA) must be set to Vd3=4V. Additionally, the LNA is not operational in this [TX] mode so Vd1=0V. RX Mode - To select the RX mode of operation the TX/RX switch, again bond pad 14 (RX), is set to logic low (0V) Vrx=0V. In this mode bond pad 32 (Vd1) for biasing the Low Noise Amplifier stage (LNA) must be set to Vd1=4V. In the RX mode the MPA is not used and must be set to Vd3=0V. TX/RX Modes - Both the gate bias circuitry (Vs1,2,3) and the interstage amplifiers (Vd2,4) must be biased at Vs(1,2,3)=-5V and Vd(2,4)=4V respectively in both TX and RX operation. CAUTION! - Also, make sure to properly sequence the applied voltages to ensure negative gate bias (Vs1,2,3) is available before applying the positive drain supply (Vd1,2,3,4). App Note [3] Attenuator / Phase Shifter Control Bias - Logic buffering is integrated in the device to supply the necessary internal switching voltages. The reference state is enabled with logic "low" on all inputs, and the binary weighted phase(amplitude) states are switched by a logic "high" on the respective control input. Amplitude(phase) variation between phase(amplitude) states is minimized by optimization of internal matching and isolation between bits. Each bit is controlled using a `0' for the reference state and a `1' for the enabled state.
Atten Level (dB) 0 0.9 1.8 3.6 7.2 14.4 27.9 Va0 Va1 0 1 0 0 0 0 1 0 0 1 0 0 0 1 Va2 0 0 0 1 0 0 1 Va3 0 0 0 0 1 0 1 Va4 0 0 0 0 0 1 1 Phase Shift (degrees) 0 5.625 11.25 22.5 45 90 180 354.375 Vp0 Vp1 0 1 0 0 0 0 0 1 0 0 1 0 0 0 0 1 Vp2 Vp3 0 0 0 1 0 0 0 1 0 0 0 0 1 0 0 1 Vp4 0 0 0 0 0 1 0 1 Vp5 0 0 0 0 0 0 1 1
App Note [4] Bias Arrangement - Each DC Bias pad (Vd1,2,3) needs to have DC bypass capacitance (~80-120 pF) as close to the device as possible.
MTTF Graphs
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
2E11 1E11
TX mode
2E11 1E11
RX mode
MTTF [Hours]
MTTF [Hours]
1E10
1E10
1E9
1E9
m11
1E8 10 20 30 40 50 60
m12
1E8 10 20 30 40 50 60
Temperature [C]
Temperature [C]
m11
temp= 60.000
MTTF_MFC_TX=1.461E8 Pavs=-30.000000, RFfreq=12.000000
m12 temp= 60.000 MTTF_MFC_RX=1.521E8 Pavs=-30.000000, RFfreq=12.000000
Page 10 of 11
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
3F, 3-2 Industry East IX Road, Science-Based Industrial Park Hsinchu 30075 Taiwan, R.O.C Tel +886-3-567-9680 / Fax +886-3-567-9433 Email mtatechnicalhelp@macomtech.com Visit macomtechasia.com for additional data sheets and product information. Characteristic data and specifications are subject to change without notice. (c)2010 M/A-COM Tech Asia
DataSheet.in
XZ1002-BD
8.5-11.0 GHz GaAs MMIC Core Chip
Handling and Assembly Information
CAUTION! - M/A-COM Tech Asia MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not ingest. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - M/A-COM Tech Asia's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of M/A-COM Tech Asia. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in anti-static containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from M/A-COM Tech Asia are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the M/A-COM Tech Asia "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310C +/- 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
Rev 01-Sep-10
Ordering Information
Part Number for Ordering XZ1002-BD-000V XZ1002-BD-EV1
Description RoHS compliant die packed in vacuum release gel paks XZ1002-BD Evaluation Module
Appropriate precautions in handling, packaging and testing devices must be observed.
Caution: ESD Sensitive
Proper ESD procedures should be followed when handling this device.
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
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3F, 3-2 Industry East IX Road, Science-Based Industrial Park Hsinchu 30075 Taiwan, R.O.C Tel +886-3-567-9680 / Fax +886-3-567-9433 Email mtatechnicalhelp@macomtech.com Visit macomtechasia.com for additional data sheets and product information. Characteristic data and specifications are subject to change without notice. (c)2010 M/A-COM Tech Asia

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